Overview
The M40SZ100WMQ6F, produced by STMicroelectronics, is a 3 V NVRAM supervisor designed to convert standard low-power SRAMs into non-volatile memory (NVRAM). This self-contained device features precision power monitoring and power switching circuitry, ensuring data integrity during power failures. It operates within a supply voltage range of 2.7 to 3.6 V and includes automatic write-protection when the VCC is out-of-tolerance, along with a reset output for power-on reset and battery low monitoring.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Operating Voltage (VCC) | 2.7 | - | 3.6 | V |
| Power Fail Detection Voltage (VPFD) | 2.55 | - | 2.70 | V |
| Supply Current (ICC) | - | - | 0.5 | mA |
| Data Retention Mode Current (ICCDR) | 50 | - | 200 | nA |
| Chip Enable Propagation Delay (tEPD) | - | - | 15 | ns |
| Write Protect Time (tWPT) | 40 | - | 200 | μs |
| Reset Output (RST) Rise Time | 40 | - | 200 | ms |
| Battery Low Voltage | - | - | 2.5 | V |
Key Features
- Converts standard low-power SRAMs into non-volatile memory (NVRAM)
- 3 V operating voltage with precision power monitoring and power switching circuitry
- Automatic write-protection when VCC is out-of-tolerance
- Reset output (RST) for power-on reset
- Battery low monitoring with an open drain output (BL)
- Power-fail input/output for undervoltage detection
- 1.25 V reference for PFI/PFO
- Less than 15 ns chip enable access propagation delay
- RoHS compliant – Lead-free second level interconnect
Applications
The M40SZ100WMQ6F is suitable for various applications requiring non-volatile memory, including:
- Embedded systems needing data retention during power failures
- Industrial control systems requiring reliable data storage
- Medical devices that need to maintain critical data integrity
- Aerospace and defense systems where data reliability is paramount
- Any system using low-power SRAMs that require conversion to NVRAM
Q & A
- What is the primary function of the M40SZ100WMQ6F?
The primary function is to convert standard low-power SRAMs into non-volatile memory (NVRAM) using precision power monitoring and power switching circuitry.
- What is the operating voltage range of the M40SZ100WMQ6F?
The operating voltage range is 2.7 to 3.6 V.
- How does the device protect data during a power failure?
The device protects data by automatically switching the SRAM from the VCC pin to an external battery and write-protecting the SRAM when VCC falls below a specified threshold.
- What is the purpose of the reset output (RST) pin?
The reset output (RST) pin is used to reset the microprocessor to a known state during power-on or when a power failure is detected.
- How does the battery low monitoring work?
The device monitors the battery voltage and asserts the Battery Low (BL) pin if the voltage falls below approximately 2.5 V, indicating the need for battery replacement.
- What is the significance of the power-fail input/output (PFI/PFO) function?
The power-fail input/output function acts as an undervoltage detector to signal a failing power supply, helping in early detection and response to power failures.
- Is the M40SZ100WMQ6F RoHS compliant?
Yes, the M40SZ100WMQ6F is RoHS compliant with a lead-free second level interconnect.
- What is the typical chip enable access propagation delay?
The typical chip enable access propagation delay is less than 15 ns.
- How often does the device perform battery low monitoring?
The device performs battery low monitoring upon power-up and at factory-programmed intervals of at least 24 hours.
- What should be done if a battery low indication is generated during a power-up sequence?
If a battery low indication is generated during a power-up sequence, it indicates the battery is below 2.5 V and may not maintain data integrity. A fresh battery should be installed, and data integrity should be verified.
