NTGD1100LT1G
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onsemi NTGD1100LT1G

Manufacturer No:
NTGD1100LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IC PWR DRIVER P-CHAN 1:1 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGD1100LT1G is a high-performance N-channel Power MOSFET produced by onsemi. This component is designed to offer excellent electrical characteristics and reliability, making it suitable for a wide range of applications. The MOSFET features a TrenchFET® technology, which enhances its power handling capabilities and efficiency. It is packaged in a TSOP-6 format, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValue
Channel ModeEnhancement
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Power Dissipation (Pd)830 mW
Drain-Source Voltage (Vds)8 V
Continuous Drain Current (Id)2.4 A
Maximum Drain Current (Idm)10 A
Package TypeTSOP-6

Key Features

  • TrenchFET® Technology: Enhances power handling and efficiency.
  • Halogen-free: Compliant with IEC 61249-2-21 standards.
  • Rohs Compliant: Meets the RoHS Directive 2002/95/EC.
  • 100% Rg Tested: Ensures reliability and quality.

Applications

The NTGD1100LT1G is versatile and can be used in various applications, including but not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Automotive systems
  • Consumer electronics

Q & A

  1. What is the package type of the NTGD1100LT1G?
    The NTGD1100LT1G is packaged in a TSOP-6 format.
  2. What is the maximum operating temperature of the NTGD1100LT1G?
    The maximum operating temperature is +150°C.
  3. Is the NTGD1100LT1G RoHS compliant?
    Yes, it is compliant with the RoHS Directive 2002/95/EC.
  4. What is the continuous drain current of the NTGD1100LT1G?
    The continuous drain current is 2.4 A.
  5. Is the NTGD1100LT1G halogen-free?
    Yes, it is halogen-free according to IEC 61249-2-21 standards.
  6. What is the maximum drain-source voltage of the NTGD1100LT1G?
    The maximum drain-source voltage is 8 V.
  7. What technology is used in the NTGD1100LT1G?
    The NTGD1100LT1G uses TrenchFET® technology.
  8. What is the power dissipation of the NTGD1100LT1G?
    The power dissipation is 830 mW.
  9. Is the NTGD1100LT1G 100% Rg tested?
    Yes, it is 100% Rg tested.
  10. What are some common applications of the NTGD1100LT1G?
    Common applications include power management systems, DC-DC converters, motor control circuits, automotive systems, and consumer electronics.

Product Attributes

Switch Type:General Purpose
Number of Outputs:1
Ratio - Input:Output:1:1
Output Configuration:High Side
Output Type:P-Channel
Interface:On/Off
Voltage - Load:1.8V ~ 8V
Voltage - Supply (Vcc/Vdd):- 
Current - Output (Max):3.3A
Rds On (Typ):40mOhm
Input Type:- 
Features:- 
Fault Protection:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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In Stock

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Same Series
NTGD1100LT1
NTGD1100LT1
IC PWR DRIVER P-CHAN 1:1 6TSOP

Similar Products

Part Number NTGD1100LT1G NTGD1100LT1
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
Switch Type General Purpose General Purpose
Number of Outputs 1 1
Ratio - Input:Output 1:1 1:1
Output Configuration High Side High Side
Output Type P-Channel P-Channel
Interface On/Off On/Off
Voltage - Load 1.8V ~ 8V 1.8V ~ 8V
Voltage - Supply (Vcc/Vdd) - -
Current - Output (Max) 3.3A 3.3A
Rds On (Typ) 40mOhm 40mOhm
Input Type - -
Features - -
Fault Protection - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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