Overview
The NLAS3899BMNTBG is a dual DPDT (Double Pole Double Throw) analog switch produced by onsemi. This component is specifically designed for low power audio and dual SIM card applications. It features a low ON resistance (RON) of 3.0 Ω and a low capacitance (CON) of 20 pF, making it ideal for routing audio signals and ensuring high bandwidth of up to 280 MHz.
Key Specifications
| Parameter | Value | Unit | Condition |
|---|---|---|---|
| Positive DC Supply Voltage (VCC) | −0.5 to +5.5 | V | Maximum Rating |
| Analog Signal Voltage (VIS) | −0.5 to VCC + 0.5 | V | Maximum Rating |
| Control Input Voltage (VIN) | −0.5 to 5.5 | V | Maximum Rating |
| ON Resistance (RON) | 3.0 Ω (Typical) | Ω | VCC = 3.0 V |
| Capacitance (CON) | 20 pF (Typical) | pF | VCC = 3.0 V |
| Bandwidth | 280 MHz | MHz | CL = 5 pF |
| Maximum Breakdown Voltage | 5.5 V | V | |
| Continuous Current Rating | ±300 mA | mA | Closed Switch |
| Storage Temperature Range | −65 to 150 °C | °C | |
| Operating Temperature Range | −40 to +85 °C | °C | |
| Package | WQFN16 (1.8 x 2.6 x 0.75 mm), QFN16 (3.0 x 3.0 x 0.9 mm) | Pb−Free |
Key Features
- Single Supply Operation: 1.65 to 4.3 V VCC, directly from Li−Ion Battery
- Low ON Resistance (RON): 3.0 Ω (Typical)
- Low Capacitance (CON): 20 pF (Typical)
- High Bandwidth: 280 MHz
- Maximum Breakdown Voltage: 5.5 V
- Low Static Power
- Interfaces with 1.8 V Chipset
- Pb−Free Devices
- ESD Protection: Human Body Model (HBM) 1000 V − All Pins, 5000 V − I/O to GND
Applications
- Cell Phone Speaker/Microphone Switching
- Ringtone−Chip/Amplifier Switching
- Dual SIM Card Data Switching
- Four Unbalanced (Single−Ended) Switches
Q & A
- What is the typical ON resistance of the NLAS3899BMNTBG?
The typical ON resistance (RON) is 3.0 Ω.
- What is the bandwidth of the NLAS3899BMNTBG?
The bandwidth is up to 280 MHz.
- What are the operating voltage ranges for the NLAS3899BMNTBG?
The positive DC supply voltage (VCC) ranges from 1.65 to 4.3 V.
- What is the maximum breakdown voltage of the NLAS3899BMNTBG?
The maximum breakdown voltage is 5.5 V.
- What are the typical applications of the NLAS3899BMNTBG?
Typical applications include cell phone speaker/microphone switching, ringtone-chip/amplifier switching, and dual SIM card data switching.
- What is the continuous current rating through each switch of the NLAS3899BMNTBG?
The continuous current rating through each switch is ±300 mA.
- Does the NLAS3899BMNTBG have ESD protection?
- What are the package options for the NLAS3899BMNTBG?
The package options include WQFN16 (1.8 x 2.6 x 0.75 mm) and QFN16 (3.0 x 3.0 x 0.9 mm), both Pb−Free.
- What is the storage temperature range for the NLAS3899BMNTBG?
The storage temperature range is −65 to 150 °C.
- Is the NLAS3899BMNTBG compatible with 1.8 V chipsets?
