Overview
The PH5830DL115 is a specialized integrated circuit (IC) produced by NXP USA Inc. This component is an N-channel TrenchMOS logic-level MOSFET, designed for high efficiency and reliability in various electronic applications. It is part of NXP's extensive range of discrete semiconductor products, known for their performance and durability.
Key Specifications
Parameter | Value |
---|---|
VDS (Drain-Source Voltage) | 30 V |
VGS (Gate-Source Voltage) | ±12 V |
ID (Continuous Drain Current) | Typically 10 A |
RDS(on) (On-State Drain-Source Resistance) | Typically 11 mΩ |
PD (Power Dissipation) | Dependent on package and thermal conditions |
Package | TO-220 or equivalent |
Key Features
- High efficiency due to low on-state resistance (RDS(on))
- Logic-level gate drive for easy interface with microcontrollers and other logic circuits
- High current handling capability
- Robust and reliable performance in various operating conditions
- Compact packaging options such as TO-220 for space-efficient designs
Applications
The PH5830DL115 is suitable for a wide range of applications, including:
- Power switching and power management systems
- Motor control and drive systems
- DC-DC converters and power supplies
- Automotive and industrial control systems
- General-purpose switching and amplification
Q & A
- What is the maximum drain-source voltage of the PH5830DL115?
The maximum drain-source voltage (VDS) is 30 V. - What is the typical on-state drain-source resistance (RDS(on)) of the PH5830DL115?
The typical on-state drain-source resistance is 11 mΩ. - What is the continuous drain current (ID) of the PH5830DL115?
The continuous drain current is typically 10 A. - What are the common package types for the PH5830DL115?
The component is available in packages such as TO-220. - Is the PH5830DL115 suitable for automotive applications?
Yes, it is suitable for automotive and industrial control systems due to its robust performance. - Can the PH5830DL115 be used in DC-DC converters?
Yes, it is commonly used in DC-DC converters and power supplies. - What is the gate-source voltage range for the PH5830DL115?
The gate-source voltage (VGS) range is ±12 V. - Is the PH5830DL115 a logic-level MOSFET?
Yes, it is designed as a logic-level MOSFET for easy interface with microcontrollers and other logic circuits. - What are the benefits of using the PH5830DL115 in power management systems?
The benefits include high efficiency, low on-state resistance, and robust performance. - Where can I find detailed specifications and datasheets for the PH5830DL115?
Detailed specifications and datasheets can be found on official NXP websites, Digi-Key, and other authorized distributors.