Overview
The MMZ09332BT1 is a high-performance, 2-stage InGaP HBT (Heterojunction Bipolar Transistor) broadband amplifier designed and manufactured by NXP USA Inc. This amplifier is optimized for use in various wireless communication systems, including LTE, TDS-CDMA, and W-CDMA. It operates over a wide frequency range of 130 MHz to 1 GHz, making it suitable for a variety of applications such as femtocell, picocell, smart grid, and wireless broadband systems. The MMZ09332BT1 is known for its exceptional linearity, high gain, and robust reliability, making it a reliable choice for demanding communication environments.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Manufacturer | NXP USA Inc. | |
| Part Number | MMZ09332BT1 | |
| Package | 12-VFQFN Exposed Pad | |
| Frequency Range | 130 MHz ~ 1 GHz | |
| Gain | 31 dB | |
| P1dB | 32 dBm | |
| OIP3 | Up to 48 dBm @ 900 MHz | |
| Supply Voltage | 3 to 5 V | |
| Supply Current | 88 to 128 mA | |
| RF Input Power | 29 dBm | |
| Storage Temperature Range | -65 to +150 °C | |
| Junction Temperature | 175 °C |
Key Features
- High Linearity: The MMZ09332BT1 offers exceptional linearity, making it suitable for LTE, TDS-CDMA, and W-CDMA applications.
- Wide Frequency Range: Operates from 130 MHz to 1 GHz, covering a broad spectrum of wireless communication frequencies.
- Active Bias Control: Adjustable externally, allowing for optimized performance in various operating conditions.
- Single Supply Voltage: Operates from a single 3 to 5 V supply, simplifying power management.
- Single-Ended Power Detector: Integrated power detector for monitoring output power.
- Cost-Effective Package: 12-pin 3 mm QFN surface mount plastic package, which is compact and cost-effective.
- Minimal External Matching: Requires minimal external matching components, simplifying circuit design.
- High Reliability and Ruggedness: Offers state-of-the-art reliability, ruggedness, temperature stability, and ESD performance.
Applications
- Femtocell and Picocell: Ideal for small cell base stations due to its high linearity and wide frequency range.
- Smart Grid: Used in smart grid communication systems for reliable and efficient data transmission.
- W-CDMA, TD-SCDMA, and LTE: Suitable for various wireless broadband applications requiring high linearity and gain.
- Wireless Broadband Systems: Applicable in a variety of wireless communication systems where high performance and reliability are critical.
Q & A
- What is the frequency range of the MMZ09332BT1 amplifier?
The MMZ09332BT1 operates over a frequency range of 130 MHz to 1 GHz.
- What is the gain of the MMZ09332BT1?
The gain of the MMZ09332BT1 is approximately 31 dB.
- What is the P1dB of the MMZ09332BT1?
The P1dB of the MMZ09332BT1 is 32 dBm.
- What is the OIP3 of the MMZ09332BT1 at 900 MHz?
The OIP3 of the MMZ09332BT1 at 900 MHz is up to 48 dBm.
- What is the supply voltage range for the MMZ09332BT1?
The MMZ09332BT1 operates from a single supply voltage of 3 to 5 V.
- What is the typical supply current for the MMZ09332BT1?
The typical supply current for the MMZ09332BT1 is between 88 to 128 mA.
- What type of package does the MMZ09332BT1 come in?
The MMZ09332BT1 comes in a 12-pin 3 mm QFN surface mount plastic package.
- What are the key applications of the MMZ09332BT1?
The MMZ09332BT1 is used in femtocell, picocell, smart grid, W-CDMA, TD-SCDMA, and LTE wireless broadband applications.
- Does the MMZ09332BT1 require external matching components?
The MMZ09332BT1 requires minimal external matching components, simplifying circuit design.
- What is the junction temperature limit for the MMZ09332BT1?
The junction temperature limit for the MMZ09332BT1 is 175 °C.
