Overview
The CBTV24DD12ET, produced by NXP USA Inc., is a 12-bit bus switch/multiplexer designed for high-speed applications in DDR4, DDR3, and DDR2 memory bus systems. This device supports operation at speeds up to 3200 MT/s, making it suitable for demanding memory interface applications. It operates with supply voltages of 1.8 V, 2.5 V, or 3.3 V and supports various signaling standards including Pseudo Open Drain (POD), SSTL_12, SSTL_15, and SSTL_18, as well as CMOS select input levels.
Key Specifications
Parameter | Description |
---|---|
Topology | 1:2 switch or 2:1 multiplex |
Bus Width | 12-bit |
Supply Voltage | 1.8 V, 2.5 V, 3.3 V |
Signaling Standards | POD, SSTL_12, SSTL_15, SSTL_18, CMOS |
Switching Speed | Up to 3200 MT/s |
Bandwidth | 7.4 GHz (for both single-ended and differential signals) |
ON Resistance (RON) | 8 Ω typical |
ΔRON | <1 Ω |
Package | TFBGA48, 3.0 mm x 8.0 mm x 1 mm, 0.65 mm ball pitch |
Operating Temperature | -10 °C to +85 °C |
ESD Robustness | Exceeds 2.5 kV HBM, 1 kV CDM |
Key Features
- Bidirectional operation due to FET switches, allowing for high-bandwidth switching or multiplexing.
- Simple CMOS select pins (SEL0, SEL1) and enable pin (EN) for easy control.
- Low ON insertion loss, return loss, and crosstalk.
- High OFF isolation.
- Very low supply current (600 μA typical).
- Back current protection on all I/O pins.
- NXP’s proprietary high-speed switch architecture.
Applications
- DDR4, DDR3, and DDR2 memory bus systems.
- NVDIMM module applications.
- Other high-speed switching or multiplexing applications requiring low insertion loss and high bandwidth.
Q & A
- What is the CBTV24DD12ET used for?
The CBTV24DD12ET is used in DDR4, DDR3, and DDR2 memory bus systems for high-speed switching and multiplexing applications.
- What are the supported supply voltages for the CBTV24DD12ET?
The device supports 1.8 V, 2.5 V, and 3.3 V supply voltages.
- What signaling standards does the CBTV24DD12ET support?
The device supports POD, SSTL_12, SSTL_15, SSTL_18, and CMOS signaling standards.
- What is the maximum switching speed of the CBTV24DD12ET?
The maximum switching speed is up to 3200 MT/s.
- What is the bandwidth of the CBTV24DD12ET?
The bandwidth is 7.4 GHz for both single-ended and differential signals.
- What is the typical ON resistance (RON) of the CBTV24DD12ET?
The typical ON resistance (RON) is 8 Ω.
- What package type is the CBTV24DD12ET available in?
The device is available in a TFBGA48 package, 3.0 mm x 8.0 mm x 1 mm, with a 0.65 mm ball pitch.
- What is the operating temperature range of the CBTV24DD12ET?
The operating temperature range is -10 °C to +85 °C.
- Does the CBTV24DD12ET have ESD protection?
Yes, it exceeds 2.5 kV HBM and 1 kV CDM ESD robustness.
- What are the control inputs for the CBTV24DD12ET?
The device uses simple CMOS select pins (SEL0, SEL1) and an enable pin (EN) for control.