Overview
The BZV55-B4V7,135 is a low-power voltage regulator diode produced by NXP USA Inc. This component is part of the BZV55 series, which is known for its wide range of nominal working voltages and high precision. The BZV55-B4V7,135 specifically has a nominal zener voltage of 4.7V and is packaged in a hermetically sealed glass SOD80C surface-mounted device (SMD) package. This diode is designed for general regulation functions and is suitable for various electronic circuits requiring stable voltage regulation.
Key Specifications
| Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|
| Forward Current (IF) | - | - | 250 mA | - |
| Non-repetitive Peak Reverse Current (IZSM) | - | - | See Table 8 and 9 | - |
| Non-repetitive Peak Reverse Power Dissipation (PZSM) | - | - | 40 W | - |
| Total Power Dissipation (Ptot) at Tamb ≤ 50°C | - | - | 500 mW | - |
| Storage Temperature (Tstg) | - | -65°C | 200°C | - |
| Junction Temperature (Tj) | - | -65°C | 200°C | - |
| Thermal Resistance from Junction to Ambient (Rth(j-a)) | - | - | 380 K/W | - |
| Zener Voltage (VZ) at 5 mA | - | - | 4.7 V ±2% | - |
Key Features
- Low-power voltage regulator diode in a hermetically sealed glass SOD80C SMD package.
- Nominal zener voltage of 4.7V with ±2% tolerance.
- Wide working voltage range from 2.4 V to 75 V across the BZV55 series.
- Total power dissipation of up to 500 mW.
- Low differential resistance.
- Non-repetitive peak reverse power dissipation of up to 40 W.
- Storage temperature range from -65°C to 200°C.
Applications
- General regulation functions in electronic circuits.
- Voltage stabilization in power supplies and voltage regulators.
- Overvoltage protection in various electronic devices.
- Signal clipping and clamping applications.
Q & A
- What is the nominal zener voltage of the BZV55-B4V7,135 diode?
The nominal zener voltage is 4.7V.
- What is the tolerance of the zener voltage for this diode?
The tolerance is ±2%.
- What is the maximum forward current for the BZV55-B4V7,135?
The maximum forward current is 250 mA.
- What is the total power dissipation of the BZV55-B4V7,135 at ambient temperatures up to 50°C?
The total power dissipation is up to 500 mW.
- What is the non-repetitive peak reverse power dissipation of this diode?
The non-repetitive peak reverse power dissipation is up to 40 W.
- What is the storage temperature range for the BZV55-B4V7,135?
The storage temperature range is from -65°C to 200°C.
- What type of package does the BZV55-B4V7,135 come in?
The diode is packaged in a hermetically sealed glass SOD80C surface-mounted device (SMD) package.
- What are some common applications for the BZV55-B4V7,135 diode?
Common applications include general regulation functions, voltage stabilization, overvoltage protection, and signal clipping and clamping.
- What is the thermal resistance from junction to ambient for this diode?
The thermal resistance from junction to ambient is up to 380 K/W.
- Is the BZV55-B4V7,135 suitable for high-temperature environments?
The diode can operate within a junction temperature range of -65°C to 200°C, making it suitable for a wide range of temperature environments.
