BUK768R1-40E118
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NXP USA Inc. BUK768R1-40E118

Manufacturer No:
BUK768R1-40E118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA BUK768R1-100E - POW
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Product Introduction

Overview

The BUK768R1-40E,118 is a high-performance N-channel TrenchMOS standard level MOSFET produced by NXP USA Inc. This component is designed and qualified to the AEC-Q101 standard, ensuring its reliability and performance in automotive and other demanding applications. The MOSFET is housed in a SOT404 (D2PAK) package, making it suitable for surface mount assembly.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
ID (Continuous Drain Current) 75 A
Ptot (Total Power Dissipation at Tc) 96 W
RDS(on) (On-State Drain-Source Resistance) -
Package SOT404 (D2PAK) -
Qualification Standard AEC-Q101 -

Key Features

  • TrenchMOS Technology: Enhances performance with low on-state resistance and high switching speed.
  • AEC-Q101 Qualified: Ensures reliability and performance in automotive and other harsh environments.
  • High Continuous Drain Current: Supports up to 75 A, making it suitable for high-power applications.
  • Low On-State Drain-Source Resistance: Minimizes power losses and improves efficiency.
  • SOT404 (D2PAK) Package: Suitable for surface mount assembly and provides good thermal performance.

Applications

  • Automotive Systems: Ideal for use in automotive powertrain, body, and chassis applications due to its AEC-Q101 qualification.
  • Industrial Power Supplies: Suitable for high-power industrial applications requiring reliable and efficient power switching.
  • Motor Control: Used in motor control circuits for its high current handling and low on-state resistance.
  • Power Conversion: Applicable in various power conversion systems such as DC-DC converters and power inverters.

Q & A

  1. What is the maximum drain-source voltage of the BUK768R1-40E,118 MOSFET?

    The maximum drain-source voltage is 40 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 75 A.

  3. What package type is the BUK768R1-40E,118 MOSFET available in?

    The MOSFET is available in a SOT404 (D2PAK) package.

  4. Is the BUK768R1-40E,118 MOSFET qualified to any automotive standards?

    Yes, it is qualified to the AEC-Q101 standard.

  5. What technology is used in the BUK768R1-40E,118 MOSFET?

    The MOSFET uses TrenchMOS technology.

  6. What are some typical applications of the BUK768R1-40E,118 MOSFET?

    Typical applications include automotive systems, industrial power supplies, motor control, and power conversion systems.

  7. What is the total power dissipation at Tc for this MOSFET?

    The total power dissipation at Tc is 96 W.

  8. Why is the BUK768R1-40E,118 MOSFET suitable for high-power applications?

    It is suitable due to its high continuous drain current and low on-state drain-source resistance.

  9. How does the TrenchMOS technology benefit the performance of the MOSFET?

    The TrenchMOS technology enhances performance by providing low on-state resistance and high switching speed.

  10. What are the advantages of using a SOT404 (D2PAK) package?

    The SOT404 package is suitable for surface mount assembly and provides good thermal performance.

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