MUR1100-AP
  • Share:

Micro Commercial Co MUR1100-AP

Manufacturer No:
MUR1100-AP
Manufacturer:
Micro Commercial Co
Package:
Tape & Box (TB)
Description:
DIODE GPP SUPER FAST 1A DO-41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR1100-AP is a high-performance power rectifier diode produced by Micro Commercial Co. Although this specific model is now obsolete and no longer manufactured, it was designed to meet the stringent requirements of various power supply and inverter applications. The diode is part of the ultrafast rectifier family, known for its excellent performance in switching inductive load circuits.

Key Specifications

ParameterValueUnit
Peak Repetitive Reverse Voltage (VRRM)1000V
Working Peak Reverse Voltage (VRWM)1000V
DC Blocking Voltage (VR)1000V
Average Rectified Forward Current (IF(AV))1.0 @ TA = 95°CA
Non-Repetitive Peak Surge Current (IFSM)35A
Operating Junction Temperature (TJ)-65 to +175°C
Storage Temperature Range (Tstg)-65 to +175°C
Maximum Instantaneous Forward Voltage (VF)1.50 @ TJ = 150°C, 1.75 @ TJ = 25°CV
Maximum Reverse Recovery Time (trr)75 ns
Maximum Forward Recovery Time (tfr)75 ns
Controlled Avalanche Energy (WAVAL)10 mJ
Package TypeAxial Lead

Key Features

  • Ultrafast recovery time of 75 nanoseconds, making it suitable for high-frequency applications.
  • High reverse energy capability, providing excellent protection against voltage transients in switching inductive load circuits.
  • Low forward voltage drop, reducing power losses and improving efficiency.
  • Low leakage current, enhancing reliability and reducing standby power consumption.
  • High temperature glass passivated junction, ensuring stable operation up to 175°C junction temperature.
  • Pb-free and RoHS compliant, meeting environmental standards.

Applications

The MUR1100-AP is designed for use in various high-performance applications, including:

  • Switching power supplies.
  • Inverters.
  • Free-wheeling diodes in inductive load circuits.
  • Automotive and industrial power management systems.
  • DC-DC converters and motor drives.

Q & A

  1. What is the peak repetitive reverse voltage of the MUR1100-AP?
    The peak repetitive reverse voltage (VRRM) of the MUR1100-AP is 1000 V.
  2. What is the average rectified forward current rating of the MUR1100-AP?
    The average rectified forward current (IF(AV)) is 1.0 A at a temperature of 95°C.
  3. What is the maximum operating junction temperature of the MUR1100-AP?
    The maximum operating junction temperature (TJ) is 175°C.
  4. Is the MUR1100-AP Pb-free and RoHS compliant?
    Yes, the MUR1100-AP is Pb-free and RoHS compliant.
  5. What is the recovery time of the MUR1100-AP?
    The reverse recovery time (trr) is 75 nanoseconds.
  6. What are the typical applications of the MUR1100-AP?
    The MUR1100-AP is typically used in switching power supplies, inverters, and as free-wheeling diodes in inductive load circuits.
  7. What is the controlled avalanche energy of the MUR1100-AP?
    The controlled avalanche energy (WAVAL) is 10 mJ.
  8. What is the package type of the MUR1100-AP?
    The MUR1100-AP comes in an axial lead package.
  9. Is the MUR1100-AP still in production?
    No, the MUR1100-AP is obsolete and no longer manufactured.
  10. What are some potential substitutes for the MUR1100-AP?
    Potential substitutes include the UF4007GP-AP and other ultrafast rectifiers with similar specifications.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:- 
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):75 ns
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:20pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-50°C ~ 150°C
0 Remaining View Similar

In Stock

-
405

Please send RFQ , we will respond immediately.

Same Series
MUR1100-TP
MUR1100-TP
DIODE GEN PURP 1KV 1A DO41
MUR120-TP
MUR120-TP
DIODE GEN PURP 200V 1A DO41
MUR160-TP
MUR160-TP
DIODE GEN PURP 600V 1A DO41
MUR180-TP
MUR180-TP
DIODE GEN PURP 800V 1A DO41
MUR105-AP
MUR105-AP
DIODE GPP SUPER FAST 1A DO-41
MUR110-AP
MUR110-AP
DIODE GPP SUPER FAST 1A DO-41
MUR115-AP
MUR115-AP
DIODE GPP SUPER FAST 1A DO-41
MUR120-AP
MUR120-AP
DIODE GPP SUPER FAST 1A DO-41
MUR105-TP
MUR105-TP
DIODE GPP SUPER FAST 1A DO-41
MUR110-TP
MUR110-TP
DIODE GPP SUPER FAST 1A DO-41
MUR115-TP
MUR115-TP
DIODE GPP SUPER FAST 1A DO-41
MUR140-TP
MUR140-TP
DIODE GPP SUPER FAST 1A DO-41

Similar Products

Part Number MUR1100-AP MUR1100-TP MUR110-AP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 100 V
Current - Average Rectified (Io) 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If - 1.75 V @ 1 A -
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns 45 ns
Current - Reverse Leakage @ Vr - 5 µA @ 1000 V -
Capacitance @ Vr, F 20pF @ 4V, 1MHz 20pF @ 4V, 1MHz 20pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41
Operating Temperature - Junction -50°C ~ 150°C -65°C ~ 175°C -50°C ~ 150°C

Related Product By Categories

BAS20-7-F
BAS20-7-F
Diodes Incorporated
DIODE GP 150V 200MA SOT23-3
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
BAS321JX
BAS321JX
Nexperia USA Inc.
BAS321J/SOD323/SOD2
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BAV23C-TP
BAV23C-TP
Micro Commercial Co
350MWSMALLSIGNALDIODESSOT-23
BAT54CDW-TP
BAT54CDW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
BAT43WS-TP
BAT43WS-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 100MA SOD323
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
BAT42W-TP
BAT42W-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOD123
BAS21T-TP
BAS21T-TP
Micro Commercial Co
DIODE GEN PURP 250V 200MA SOT523
1N4007-N-2-2-BP
1N4007-N-2-2-BP
Micro Commercial Co
DIODE GEN PURP 1KV 1A DO-41
1N5366B-TP
1N5366B-TP
Micro Commercial Co
DIODE ZENER 39V 5W DO15
1N5361B-TP
1N5361B-TP
Micro Commercial Co
DIODE ZENER 27V 5W DO15
BZV55C3V9-TP
BZV55C3V9-TP
Micro Commercial Co
DIODE ZENER 3.9V 500MW MINI MELF
MMBT2222AT-TP
MMBT2222AT-TP
Micro Commercial Co
TRANS NPN 40V 0.6A SOT523
TIP107-BP
TIP107-BP
Micro Commercial Co
TRANS PNP 100V 8A TO220AB