MBR10100CTF-G1
  • Share:

Diodes Incorporated MBR10100CTF-G1

Manufacturer No:
MBR10100CTF-G1
Manufacturer:
Diodes Incorporated
Package:
Tube
Description:
DIODE ARRAY SCHOTTKY 100V TO220F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR10100CTF-G1 is a high-voltage power Schottky rectifier diode produced by Diodes Incorporated. This device is designed for use in medium voltage operations and is particularly suited for high-frequency circuits where low switching losses and low noise are critical. It is available in the standard TO-220F-3 and TO-220-3 packages, making it versatile for various applications in power management and conversion.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM100V
Average Rectified Forward Current (Per Diode)IO5A
Maximum Forward Voltage @ +25°CVF (MAX)0.85V
Non-Repetitive Peak Forward Surge Current (8.3ms Single Half Sine-Wave)IFSM110A
Operating Junction TemperatureTJ-55°C to 150°C°C
Package TypeTO-220F-3, TO-220-3

Key Features

  • Low Forward Voltage: 0.85V @ +25°C
  • High Surge Current Capability
  • +150°C Operating Junction Temperature
  • 10A Total (5A Each Diode Leg)
  • Guard-Ring for Stress Protection
  • Lead-Free Finish
  • Fast Recovery Time: < 500ns

Applications

  • Power Supply Output Rectification
  • Power Management
  • Instrumentation
  • High Frequency Circuits
  • Switch Mode Power Supplies and Other Power Converters

Q & A

  1. What is the peak repetitive reverse voltage of the MBR10100CTF-G1?
    The peak repetitive reverse voltage is 100V.
  2. What is the maximum forward voltage at +25°C?
    The maximum forward voltage at +25°C is 0.85V.
  3. What is the operating junction temperature range of the MBR10100CTF-G1?
    The operating junction temperature range is -55°C to 150°C.
  4. What is the non-repetitive peak forward surge current?
    The non-repetitive peak forward surge current is 110A for an 8.3ms single half sine-wave.
  5. In what packages is the MBR10100CTF-G1 available?
    The device is available in TO-220F-3 and TO-220-3 packages.
  6. What are some typical applications of the MBR10100CTF-G1?
    Typical applications include power supply output rectification, power management, instrumentation, and high-frequency circuits.
  7. Does the MBR10100CTF-G1 have any special protection features?
    Yes, it includes a guard-ring for stress protection.
  8. Is the MBR10100CTF-G1 lead-free?
    Yes, the device has a lead-free finish.
  9. What is the recovery time of the MBR10100CTF-G1?
    The recovery time is less than 500ns.
  10. How many diodes are in the MBR10100CTF-G1 package?
    The package includes a pair of diodes with a common cathode.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io) (per Diode):5A
Voltage - Forward (Vf) (Max) @ If:850 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:100 µA @ 100 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220F-3
0 Remaining View Similar

In Stock

$0.46
1,326

Please send RFQ , we will respond immediately.

Same Series
MBR10100CTF-G1
MBR10100CTF-G1
DIODE ARRAY SCHOTTKY 100V TO220F
MBR10100CT-E1
MBR10100CT-E1
DIODE SCHOTTKY 100V 5A ITO220S
MBR10100CTF-E1
MBR10100CTF-E1
DIODE SCHOTTKY 100V 5A TO220AB
MBR10100CDTR-E1
MBR10100CDTR-E1
DIODE ARRAY SCHOTTKY 100V TO252
MBR10100CDTR-G1
MBR10100CDTR-G1
DIODE ARRAY SCHOTTKY 100V TO252
MBR10100CS2-G1
MBR10100CS2-G1
DIODE ARRAY SCHOTTKY 100V TO263
MBR10100CS2TR-G1
MBR10100CS2TR-G1
DIODE ARRAY SCHOTTKY 100V TO263

Related Product By Categories

MBR20100CT-G1
MBR20100CT-G1
Diodes Incorporated
DIODE SCHOTTKY 100V 10A TO220AB
BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAV 70W H6327
BAV 70W H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAW56DW_R1_00001
BAW56DW_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAS 70-05 E6433
BAS 70-05 E6433
Infineon Technologies
SCHOTTKY DIODE
BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAS40-04-7-F
BAS40-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
SBAV99WT1G
SBAV99WT1G
onsemi
DIODE ARRAY GP 100V 215MA SOT323
STPS40170CT
STPS40170CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 170V TO220
BAV99S/MI115
BAV99S/MI115
NXP USA Inc.
RECTIFIER DIODE
STTH60AC06CWL
STTH60AC06CWL
STMicroelectronics
DIODE UFAST 600V TO247

Related Product By Brand

BAT54A-7-F
BAT54A-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BZX84C15TS-7-F
BZX84C15TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 15V SOT363
BZX84C6V2-7-F
BZX84C6V2-7-F
Diodes Incorporated
DIODE ZENER 6.2V 300MW SOT23-3
BZX84C18-7
BZX84C18-7
Diodes Incorporated
DIODE ZENER 18V 300MW SOT23
2N7002W-7-F
2N7002W-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT323
2N7002A-7
2N7002A-7
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
BSN20Q-7
BSN20Q-7
Diodes Incorporated
MOSFET N-CH 50V 500MA SOT23
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523