Overview
The HMC8325 is an integrated E-band gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) chip produced by Analog Devices Inc. This component operates within the frequency range of 71 GHz to 86 GHz, making it ideal for E-band communications and high capacity wireless backhaul radio systems. The HMC8325 exhibits excellent linearity and provides a typical gain of 21 dB, along with a noise figure of 3.6 dB. It requires a power supply of 3 V and a current of 50 mA, making it efficient for various high-frequency applications.
Key Specifications
| Parameter | Typical Value | Unit |
|---|---|---|
| Frequency Range | 71 GHz to 86 GHz | GHz |
| Gain | 21 dB | dB |
| Noise Figure | 3.6 dB | dB |
| Output Power for 1 dB Compression (P1dB) | 13 dBm | dBm |
| Output Third-Order Intercept Point (OIP3) | 22 dBm | dBm |
| Saturated Output Power (PSAT) | 17 dBm | dBm |
| Input Return Loss | 15 dB | dB |
| Output Return Loss | 17 dB | dB |
| Supply Voltage | 3 V | V |
| Supply Current | 50 mA | mA |
| Die Size | 2.844 mm × 0.999 mm × 0.05 mm | mm |
Key Features
- Four cascaded gain stages using depletion mode, pseudomorphic high electron mobility transfer (pHEMT) transistors.
- Excellent linearity across the 71 GHz to 86 GHz frequency range.
- Low noise figure of 3.6 dB typical.
- High gain of 21 dB typical.
- Low power consumption: 50 mA from a 3 V power supply.
- Compact die size: 2.844 mm × 0.999 mm × 0.05 mm.
- Optimized for E-band communications and high capacity wireless backhaul radio systems.
Applications
- E-band communication systems.
- High capacity wireless backhaul radio systems.
- Test and measurement equipment.
Q & A
- What is the frequency range of the HMC8325?
The HMC8325 operates within the frequency range of 71 GHz to 86 GHz.
- What is the typical gain of the HMC8325?
The HMC8325 provides a typical gain of 21 dB.
- What is the noise figure of the HMC8325?
The noise figure of the HMC8325 is typically 3.6 dB.
- What is the output power for 1 dB compression (P1dB) of the HMC8325?
The output power for 1 dB compression (P1dB) is typically 13 dBm.
- What is the output third-order intercept point (OIP3) of the HMC8325?
The output third-order intercept point (OIP3) is typically 22 dBm.
- What is the saturated output power (PSAT) of the HMC8325?
The saturated output power (PSAT) is typically 17 dBm.
- What are the typical supply voltage and current for the HMC8325?
The HMC8325 requires a supply voltage of 3 V and a supply current of 50 mA.
- What are the primary applications of the HMC8325?
The primary applications include E-band communication systems, high capacity wireless backhaul radio systems, and test and measurement equipment.
- How should the HMC8325 be mounted and bonded?
The HMC8325 should be attached directly to the ground plane eutectically or with conductive epoxy, and microstrip transmission lines should be used to bring RF signals to and from the chip.
- What precautions should be taken during the power-up of the HMC8325?
Follow the recommended bias sequence during power-up to ensure that damage does not occur. This includes turning off the RF input signal, setting the drain and gate bias voltages to 0 V, and then applying the supply voltages in a specific sequence.
