Overview
The HMC637ALP5E, produced by Analog Devices Inc., is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) that utilizes pseudomorphic high electron mobility transistor (pHEMT) technology. This distributed power amplifier operates over a wide frequency range from 0.1 GHz to 6 GHz, making it suitable for various high-frequency applications. The amplifier is designed to provide high gain, high output power, and excellent linearity, which are critical for applications in electronic warfare, electronic counter-measures, radar, and test equipment.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Frequency Range | 0.1 GHz to 6 GHz | GHz |
| Gain | 13 dB | dB |
| Output Third-Order Intercept (IP3) | 44 dBm | dBm |
| Output Power at 1 dB Gain Compression (P1dB) | 29 dBm | dBm |
| Supply Voltage | 12 V | V |
| Supply Current | 400 mA | mA |
| Gain Flatness | ±0.75 dB (100 MHz to 6 GHz) | dB |
| Input Return Loss | 12 dB | dB |
| Output Return Loss | 15 dB | dB |
| Noise Figure | 5 dB (2.0 GHz to 6.0 GHz) | dB |
| Package Type | 32-Lead QFN (5mm x 5mm w/ EP) | |
| RoHS Status | ROHS3 Compliant |
Key Features
- High gain of 13 dB across the frequency range of 0.1 GHz to 6 GHz.
- High output power with a P1dB of 29 dBm and saturated output power of 31 dBm.
- Excellent linearity with an output third-order intercept (IP3) of 44 dBm.
- Internally matched RF I/Os to 50 Ω, simplifying the design process.
- Compact 5 mm x 5 mm lead frame chip scale package (LFCSP) compatible with high-volume surface-mount technology (SMT) assembly.
- Low gain variation over temperature, ensuring stable performance across different environmental conditions.
Applications
- Electronic warfare (EW) and electronic counter-measures (ECM).
- Radar systems.
- Test and measurement equipment.
- Very small aperture terminal (VSAT) systems.
- Military and space applications.
- Fiber optic systems.
Q & A
- What is the frequency range of the HMC637ALP5E amplifier?
The HMC637ALP5E operates from 0.1 GHz to 6 GHz.
- What is the gain of the HMC637ALP5E amplifier?
The amplifier provides a gain of 13 dB.
- What is the output power at 1 dB gain compression (P1dB) for the HMC637ALP5E?
The output power at 1 dB gain compression is 29 dBm.
- What is the supply voltage and current for the HMC637ALP5E?
The supply voltage is 12 V, and the typical supply current is 400 mA.
- What is the package type of the HMC637ALP5E?
The amplifier is packaged in a 32-Lead QFN (5mm x 5mm w/ EP).
- Is the HMC637ALP5E RoHS compliant?
- What are the typical applications of the HMC637ALP5E?
The amplifier is used in electronic warfare, electronic counter-measures, radar, test equipment, VSAT systems, and other high-frequency applications.
- How is the gain flatness of the HMC637ALP5E?
The gain flatness is ±0.75 dB from 100 MHz to 6 GHz.
- What is the noise figure of the HMC637ALP5E?
The noise figure is 5 dB from 2.0 GHz to 6.0 GHz.
- Are the RF I/Os internally matched?
