HMC637ALP5ETR
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Analog Devices Inc. HMC637ALP5ETR

Manufacturer No:
HMC637ALP5ETR
Manufacturer:
Analog Devices Inc.
Package:
Tape & Reel (TR)
Description:
IC RF AMP VSAT 0HZ-6GHZ 32QFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The HMC637ALP5ETR from Analog Devices Inc. is a high-performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier. This component operates within a frequency range of 0.1 GHz to 6 GHz, making it versatile for various high-frequency applications.

Key Specifications

Parameter Value
Frequency Range 0.1 GHz to 6 GHz
Gain 13 dB
Output Third-Order Intercept (IP3) 44 dBm
Output Power at 1 dB Gain Compression 29 dBm
Supply Voltage 12 V
Supply Current 400 mA
Gain Flatness ±0.75 dB (from 100 MHz to 6 GHz)
Package Type 32-Lead QFN (5mm x 5mm w/ EP)

Key Features

  • Internally matched RF I/Os to 50 Ω, simplifying circuit design and reducing external component requirements.
  • High gain and high output power, making it suitable for applications requiring significant signal amplification.
  • Excellent gain flatness across the operating frequency range, ensuring consistent performance.
  • Compact 5 mm x 5 mm lead frame chip scale package (LFCSP) compatible with high-volume surface-mount technology (SMT) assembly equipment.

Applications

  • Electronic Warfare (EW) and Electronic Counter-Measure (ECM) systems.
  • Radar systems.
  • Test and measurement equipment.
  • Satellite Communications (VSAT) components.

Q & A

  1. What is the frequency range of the HMC637ALP5ETR?

    The HMC637ALP5ETR operates within a frequency range of 0.1 GHz to 6 GHz.

  2. What is the gain of the HMC637ALP5ETR?

    The gain of the HMC637ALP5ETR is 13 dB.

  3. What is the output third-order intercept (IP3) of the HMC637ALP5ETR?

    The output third-order intercept (IP3) is 44 dBm.

  4. What is the output power at 1 dB gain compression for the HMC637ALP5ETR?

    The output power at 1 dB gain compression is 29 dBm.

  5. What is the supply voltage and current for the HMC637ALP5ETR?

    The supply voltage is 12 V, and the supply current is 400 mA.

  6. What is the gain flatness of the HMC637ALP5ETR?

    The gain flatness is ±0.75 dB from 100 MHz to 6 GHz.

  7. What type of package does the HMC637ALP5ETR come in?

    The HMC637ALP5ETR comes in a 32-Lead QFN (5mm x 5mm w/ EP) package.

  8. What are the typical applications for the HMC637ALP5ETR?

    The HMC637ALP5ETR is typically used in electronic warfare (EW), electronic counter-measure (ECM), radar systems, test and measurement equipment, and satellite communications (VSAT).

  9. Is the HMC637ALP5ETR compatible with surface-mount technology (SMT) assembly?

    Yes, the HMC637ALP5ETR is compatible with high-volume SMT assembly equipment.

  10. Are the RF I/Os of the HMC637ALP5ETR internally matched?

    Yes, the RF I/Os are internally matched to 50 Ω.

Product Attributes

Frequency:0Hz ~ 6GHz
P1dB:29dBm
Gain:13dB
Noise Figure:5dB
RF Type:VSAT
Voltage - Supply:12V
Current - Supply:400mA
Test Frequency:- 
Mounting Type:Surface Mount
Package / Case:32-VFQFN Exposed Pad
Supplier Device Package:32-QFN (5x5)
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In Stock

$152.23
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EVAL BOARD FOR HMC637ALP5
HMC637ALP5ETR
HMC637ALP5ETR
IC RF AMP VSAT 0HZ-6GHZ 32QFN

Similar Products

Part Number HMC637ALP5ETR HMC627ALP5ETR
Manufacturer Analog Devices Inc. Analog Devices Inc.
Product Status Active Obsolete
Frequency 0Hz ~ 6GHz 50MHz ~ 1GHz
P1dB 29dBm 20dBm
Gain 13dB 17.5dB
Noise Figure 5dB 4.3dB
RF Type VSAT LTE, WiMax
Voltage - Supply 12V 5V
Current - Supply 400mA 90.5mA
Test Frequency - 350MHz ~ 1GHz
Mounting Type Surface Mount Surface Mount
Package / Case 32-VFQFN Exposed Pad 32-VFQFN Exposed Pad
Supplier Device Package 32-QFN (5x5) 32-QFN (5x5)

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