Overview
The HMC441LP3TR is a GaAs pHEMT MMIC (Monolithic Microwave Integrated Circuit) Medium Power Amplifier produced by Analog Devices Inc. This amplifier operates within the frequency range of 6 to 18 GHz, making it suitable for various high-frequency applications. It is designed to provide high gain, saturated power, and efficiency, making it an ideal component for modern wireless and RF systems.
Key Specifications
| Parameter | Value |
|---|---|
| Frequency Range | 6 - 18 GHz |
| Gain | 15.5 dB |
| Saturated Power | +22 dBm |
| Power Added Efficiency (PAE) | 23% at +5V supply voltage |
| Supply Voltage | +5V with optional gate bias |
| Input/Output Impedance | 50 Ohm matched |
| Die Size | 0.94 x 0.94 x 0.1 mm |
| Maximum Drain Bias Voltage | +5.5 Vdc |
| Maximum Gate Bias Voltage | -8 to 0 Vdc |
| Maximum RF Input Power | +20 dBm at Vdd = +5Vdc |
| Channel Temperature | 175 °C |
Key Features
- High gain of 15.5 dB and saturated power of +22 dBm.
- High power added efficiency (PAE) of 23% at +5V supply voltage.
- Optional gate bias for adjusting gain, RF output power, and DC power dissipation.
- Small die size (0.94 x 0.94 x 0.1 mm) suitable for integration into Multi-Chip-Modules (MCMs).
- Backside of the die is both RF and DC ground, simplifying assembly and reducing performance variation.
Applications
- Point-to-Point and Point-to-Multi-Point Radios.
- VSAT (Very Small Aperture Terminal) systems.
- Wireless infrastructure and communication systems.
- Radar and electronic warfare systems.
Q & A
- What is the frequency range of the HMC441LP3TR amplifier?
The HMC441LP3TR operates within the frequency range of 6 to 18 GHz.
- What is the gain of the HMC441LP3TR amplifier?
The gain of the HMC441LP3TR is 15.5 dB.
- What is the saturated power output of the HMC441LP3TR?
The saturated power output is +22 dBm.
- What is the power added efficiency (PAE) of the HMC441LP3TR?
The PAE is 23% at a +5V supply voltage.
- Can the gain and output power of the HMC441LP3TR be adjusted?
- What is the maximum drain bias voltage for the HMC441LP3TR?
The maximum drain bias voltage is +5.5 Vdc.
- What is the maximum RF input power for the HMC441LP3TR?
The maximum RF input power is +20 dBm at Vdd = +5Vdc.
- What are some typical applications of the HMC441LP3TR?
Typical applications include Point-to-Point and Point-to-Multi-Point Radios, VSAT systems, wireless infrastructure, and radar systems.
- How is the backside of the die configured?
The backside of the die is both RF and DC ground, simplifying the assembly process and reducing performance variation.
- What is the size of the HMC441LP3TR die?
The die size is 0.94 x 0.94 x 0.1 mm.
