Overview
The ADG759BCPZ-REEL, produced by Analog Devices Inc., is a low voltage, CMOS analog multiplexer designed for high-performance applications. This device comprises four differential channels and is capable of switching one of four differential inputs to a common differential output. The switching is controlled by 2-bit binary address lines A0 and A1, and an EN input is used to enable or disable the device. When disabled, all channels are switched OFF. The ADG759 is ideal for battery-powered, portable instruments due to its low power consumption and operating supply range of 1.8 V to 5.5 V.
Key Specifications
Parameter | Value | Conditions |
---|---|---|
Supply Voltage (VDD) | 1.8 V to 5.5 V | |
ON Resistance (R_ON) | 3 Ω typical | VS = 0 V to VDD, IDS = 10 mA |
ON Resistance Flatness (RFLAT(ON)) | 0.75 Ω typical, 1.2 Ω max | VS = 0 V to VDD, IDS = 10 mA |
Source/Drain OFF Leakage (IS(OFF), ID(OFF)) | ±0.01 nA typical, ±0.1 nA max | VD = 4.5 V/1 V, VS = 1 V/4.5 V |
Channel ON Leakage (ID, IS (ON)) | ±0.01 nA typical, ±0.75 nA max | VD = VS = 1 V or 4.5 V |
Input High Voltage (VINH) | 2.4 V min | |
Input Low Voltage (VINL) | 0.8 V max | |
Input Current (IINL or IINH) | 0.005 µA typical, ±0.1 µA max | VIN = VINL or VINH |
Transition Time (tTRANSITION) | 14 ns typical, 25 ns max | RL = 300 Ω, CL = 35 pF |
Break-Before-Make Time Delay (tD) | 8 ns typical, 1 ns min | RL = 300 Ω, CL = 35 pF |
Enable Time (tON (EN)) | 14 ns typical, 25 ns max | RL = 300 Ω, CL = 35 pF |
Disable Time (tOFF (EN)) | 7 ns typical, 12 ns max | RL = 300 Ω, CL = 35 pF |
Operating Temperature Range | –40°C to +85°C (Industrial B Version) |
Key Features
- Low Voltage Operation: The ADG759 operates over a supply range of 1.8 V to 5.5 V, making it suitable for battery-powered devices.
- Low Power Consumption: The device has low power dissipation, with a typical current consumption of 0.001 µA when digital inputs are at 0 V or VDD.
- Break-Before-Make Switching: All channels exhibit break-before-make switching action, preventing momentary shorting when switching channels.
- High Switching Speed: The device features fast transition times and low charge injection, making it suitable for high-speed applications.
- Compact Packaging: Available in a 16-lead TSSOP package and 20-lead LFCSP package, which is ideal for space-constrained designs.
Applications
- Data Acquisition Systems: The ADG759 is suitable for data acquisition systems due to its low noise and high accuracy.
- Communication Systems: It can be used in communication systems for signal routing and switching.
- Relay Replacement: The device can replace mechanical relays in many applications, offering higher reliability and faster switching times.
- Audio and Video Switching: Ideal for audio and video switching applications due to its low distortion and high signal integrity.
- Battery-Powered Systems: Suitable for battery-powered, portable instruments due to its low power consumption.
Q & A
- What is the operating supply voltage range of the ADG759?
The ADG759 operates over a supply range of 1.8 V to 5.5 V.
- How many differential channels does the ADG759 have?
The ADG759 has four differential channels.
- What is the typical ON resistance of the ADG759?
The typical ON resistance is 3 Ω.
- What is the break-before-make switching action in the ADG759?
The break-before-make switching action prevents momentary shorting when switching channels.
- What are the typical transition times for the ADG759?
The typical transition time is 14 ns, with a maximum of 25 ns.
- What is the operating temperature range for the ADG759?
The operating temperature range is –40°C to +85°C for the Industrial B Version.
- What types of packages are available for the ADG759?
The ADG759 is available in 16-lead TSSOP and 20-lead LFCSP packages.
- What are some common applications for the ADG759?
- How does the ADG759 handle digital inputs?
The device has input high and low voltage thresholds of 2.4 V min and 0.8 V max, respectively, and a typical input current of 0.005 µA.
- What is the charge injection of the ADG759?
The charge injection is typically ±3 pC.