Overview
The ADG508FBRN-REEL7, manufactured by Analog Devices Inc., is a CMOS analog multiplexer that offers high performance and reliability in various analog switching applications. This device is part of the ADG508F series, which features eight single channels, allowing it to switch one of eight inputs to a common output based on 3-bit binary address lines. The ADG508FBRN-REEL7 is packaged in a 16-pin SOIC (Small Outline Integrated Circuit) and is available in reel format, making it suitable for high-volume production.
Key Specifications
| Parameter | Typical | Maximum | Unit |
|---|---|---|---|
| Number of Channels | 8 | - | - |
| Switching Configuration | Single-Ended Multiplexer | - | - |
| On Resistance (RON) | - | 390 | Ω |
| Input High Voltage (VINH) | - | 2.4 | V |
| Input Low Voltage (VINL) | - | 0.8 | V |
| Digital Input Capacitance (CIN) | - | 8 | pF |
| Switch On Time (tON) | 250 | 450 | ns |
| Switch Off Time (tOFF) | 250 | 450 | ns |
| Off Isolation | - | 68 | dB |
| Channel Leakage Current (IS, ID Off) | - | 1 nA | - |
| Operating Temperature Range | -40 to 85 | - | °C |
Key Features
- Fault Protection: The ADG508FBRN-REEL7 can withstand continuous voltage inputs from -40 V to +55 V, protecting the device and succeeding circuitry from overvoltage conditions.
- Low RON: The device features low on-resistance, ensuring minimal signal degradation.
- Fast Switching Times: With switch on and off times of 250 ns typical, this multiplexer is suitable for high-speed applications.
- Break-Before-Make Switching: This feature prevents momentary shorting of input signals, ensuring signal integrity.
- Trench Isolation: The use of trench isolation eliminates latch-up, enhancing device reliability.
- CMOS Compatibility: The device is designed using an enhanced LC2MOS process, allowing operation over a wide voltage range.
Applications
- Audio and Video Switching: Suitable for switching audio and video signals in consumer electronics.
- Medical Equipment: Used in medical devices where high reliability and low signal distortion are critical.
- Industrial Automation: Applicable in industrial control systems where multiple analog signals need to be switched.
- Test and Measurement Equipment: Ideal for use in test and measurement instruments requiring precise analog switching.
- Aerospace and Defense: Used in various aerospace and defense applications due to its robust fault protection and reliability.
Q & A
- What is the primary function of the ADG508FBRN-REEL7?
The ADG508FBRN-REEL7 is a CMOS analog multiplexer that switches one of eight inputs to a common output based on 3-bit binary address lines.
- What is the package type of the ADG508FBRN-REEL7?
The device is packaged in a 16-pin SOIC (Small Outline Integrated Circuit) and is available in reel format.
- What are the key features of the ADG508FBRN-REEL7?
The device features fault protection, low on-resistance, fast switching times, break-before-make switching, and trench isolation.
- What is the operating temperature range of the ADG508FBRN-REEL7?
The operating temperature range is from -40°C to 85°C.
- How does the ADG508FBRN-REEL7 handle overvoltage conditions?
The device can withstand continuous voltage inputs from -40 V to +55 V, with one of the MOSFETs saturating to limit the current during fault conditions.
- What is the typical switch on and off time for the ADG508FBRN-REEL7?
The typical switch on and off times are 250 ns each.
- What is the maximum on-resistance (RON) of the ADG508FBRN-REEL7?
The maximum on-resistance is 390 Ω.
- What are some common applications of the ADG508FBRN-REEL7?
Common applications include audio and video switching, medical equipment, industrial automation, test and measurement equipment, and aerospace and defense.
- How does the break-before-make switching feature work?
The break-before-make switching feature ensures that the old channel is turned off before the new channel is turned on, preventing momentary shorting of input signals.
- What is the purpose of trench isolation in the ADG508FBRN-REEL7?
Trench isolation eliminates latch-up by separating the p and n-channel MOSFETs with a dielectric trench.
